Type Designator: 2N2950 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 0.7 W Maximum Collector-Base Voltage |Vcb|: 85 V Maximum Collector-Emitter Voltage |Vce|: 40 V Maximum Emitter-Base Voltage |Veb|: 3 V Maximum Collector Current |Ic max|: 0.7 A Max. Operating Junction Temperature (Tj): 175 °C Transition Frequency (ft): 100 MHz Collector Capacitance (Cc): 20 pF Forward Current Transfer Ratio (hFE), MIN: 5 Noise Figure, dB: – Package: TO61
