Type Designator: 2N3866 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 5 W Maximum Collector-Base Voltage |Vcb|: 55 V Maximum Collector-Emitter Voltage |Vce|: 30 V Maximum Emitter-Base Voltage |Veb|: 3 V Maximum Collector Current |Ic max|: 0.4 A Max. Operating Junction Temperature (Tj): 200 °C Transition Frequency (ft): 500 MHz Collector Capacitance (Cc): 3 pF Forward Current Transfer Ratio (hFE), MIN: 10 Noise Figure, dB: – Package: TO5
