Type Designator: 2N4431 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 18 W Maximum Collector-Base Voltage |Vcb|: 55 V Maximum Collector-Emitter Voltage |Vce|: 40 V Maximum Emitter-Base Voltage |Veb|: 3 V Maximum Collector Current |Ic max|: 2 A Max. Operating Junction Temperature (Tj): 175 °C Transition Frequency (ft): 600 MHz Collector Capacitance (Cc): 10 pF Forward Current Transfer Ratio (hFE), MIN: 20 Noise Figure, dB: – Package: TO128
