Type Designator: 2N4933 Material of Transistor: Si Polarity: NPN Maximum Collector Power Dissipation (Pc): 70 W Maximum Collector-Base Voltage |Vcb|: 70 V Maximum Collector-Emitter Voltage |Vce|: 35 V Maximum Emitter-Base Voltage |Veb|: 4 V Maximum Collector Current |Ic max|: 10 A Max. Operating Junction Temperature (Tj): 200 °C Transition Frequency (ft): 100 MHz Collector Capacitance (Cc): 85 pF Forward Current Transfer Ratio (hFE), MIN: 10 Noise Figure, dB: – Package: TO62
