Type Designator: BSM75GB170DN2 Type of IGBT Channel: N Maximum Power Dissipation (Pc), W: 625 Maximum Collector-Emitter Voltage |Vce|, V: 1700 Collector-Emitter saturation Voltage |Vcesat|, V: 3.4 Maximum Gate-Emitter Voltage |Veg|, V: 20 Maximum Collector Current |Ic|, A: 110 Maximum Junction Temperature (Tj), °C: 150 Rise Time, nS: 150 Maximum Collector Capacity (Cc), pF: 1000 Package: MODULE
